wpm 3401 http://www. jestek .com .cn page 1 WPM3401 p-channel enhancement mode mosfet order information wpm 3401- 3 /tr s ot23 3000 tape&reel description the wpm 3401 is the p-channel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. features z -30v/- 4.3 a,rds(on) 65m ? @vgs=- 10v z -30v/- 3.4 a,rds(on) 90m ? @vgs=-4.5v z super high density cell design for extremely low rds (on) z exceptional on-resistance and maximum dc current capability z sot23 package design application z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch = date code = specific device code wp1u u wp1 http://www.jestek.com.cn p?channel mosfet g s d top view 2 3 1 1 2 3 gate source drain package part number shipping < < free datasheet http:///
WPM3401 http://www. jestek .com .cn page 2 absolute maximum ratings v ds drain-source voltage -30 v v gs gate-source voltage 20 v i d continuous drain current steady-state ta=25 - 4.3 a steady-state ta=70 - 3.4 i dm pulse drain current -2 0 a p d power dissipation ta=25 2.8 w ta=70 1.8 t j operating junction temperature range -55~150 tstg storage temperature range r ja thermal resistance-junction to ambient 70 /w electrical characteristics (t a =25 unles : s otherwise noted) static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -30 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -2.5 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =-30v,v gs =0v -1 zero gate voltage drain current i dss v ds =-30v,v gs =0v t j =85 : -5 ua on-state drain current i d(on) v ds = -5v,v gs =-4.5v -10 a v gs =-10v,i d =-7.2a 0.055 0.065 drain-source on-resistance r ds(on) v gs =-4.5v,i d =-5.0a 0.0 76 0.090 forward transconductance gfs v ds =-15v,i d =-5.7a 13 s diode forward voltage v sd i s =-1.3a,v gs =0v -0.72 -1.0 v -0.8 -1.37 dynamic total gate charge q g 14 18 gate-source charge q gs 3.1 gate-drain charge q gd v ds =-15v,v gs =-10v i d = -3.5a 3 nc input capacitance c iss 700 output capacitance c oss 120 reverse transfer capacitance c rss v ds =-15v,v gs =0v f=1mhz 75 pf t d(on) 8 18 turn-on time t r 5 18 t d(off) 28 50 turn-off time t f v dd =-15v,r l =15 i d a -1.0a,v gen =-10v r g =6 13 35 ns parameter (ta=25 unless otherwise specified) : ! parameter parameter symbol conditions min. typ max. unit value l parameter unit symbol free datasheet http:///
WPM3401 http://www. jestek .com .cn page 3 typical performance characteristis 012345 0 4 8 12 16 20 24 i d ,drain current(a) v gs =10v v gs =6v v gs =4v v gs =3v v ds ,drain-source voltage(v) drain current vs drain-source voltage 0 5 10 15 20 30 60 90 120 150 180 v gs =4.5v v gs =10v v gs =6v i d , drain current(a) drain current vs on resistance r ds(on) on resistance(mohm) 0246810 0.04 0.08 0.12 0.16 0.20 i d =5.7a gate-source voltage vs on resistance r ds(on) on resistance(ohm) v gs ,gate-source voltage(v) 0123456 0 5 10 15 20 25 v gs ,gate-source voltage(v) v ds =2v i d ,drain current(a) drain current vs gate-source voltage 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) on-resistance vs. junction normalized on-resistance v gs =-10v v gs =-4.5v i d =-5a 0.0 0.2 0.4 0.6 0.8 0.0 0.3 0.6 0.9 1.2 1.5 is, source-drain current(a) v ds ,drain-source voltage(v) drain current vs source-drain current free datasheet http:///
http://www. jestek .com .cn page 4 WPM3401 0 1 2 3 4 5 6 7 8 9 10 0246810121416 -q g (nc) gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 -v ds (volts) capacitance characteristics capacitance (pf) c iss c oss c rss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) normalized maximum transient thermal impedance z t ja normalized transient thermal resistance 0.1 1 10 100 0.1 1 10 100 -v ds (volts) -i d (amps) maximum forward biased safe operating area (note e) 100 p s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-6a single pulse d=t on /t t j,pk =t a +p dm .z t ja .r t ja r t ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 p s free datasheet http:///
http://www. m h v w h n .com f q WPM3401 packaging information sot23 package outline dimension min max min max a 0.900 1.200 0.035 0.047 a1 0.000 0.100 0.000 0.004 a2 0.900 1.100 0.035 0.043 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 l l1 0.300 0.500 0.012 0.020 0 8 0 8 0.550 ref 0.022 ref symbol dimensions in millimeters dimensions in in ches 0.950 typ 0.037 typ page 5 free datasheet http:///
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